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Home > Products&Services > Semiconductor Process Equipmen > Epitaxial Thick Film Crystal Growth Furnace

HVPE - Vertical

Performance：

 ◆Operation temperature：200～1200℃/2200℃

 ◆Structural method: horizontal/vertical, number of pieces: 1/3/6/multiple pieces (scientific research/production type)

 ◆Multi temperature zone, dynamic high-precision growth condition control

 ◆Low pressure, atmospheric pressure, micro positive pressure process, substrate lifting and rotation (thick film/crystal growth)


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