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Home > Products&Services > Semiconductor Process Equipmen > Epitaxial Thick Film Crystal Growth Furnace

High pressure crystal furnace

Performance：

 ◆Temperature：500～2500℃，High temperature resistance/induction heater, optimized thermal field design

 ◆Multi temperature zone graphite crucible, lifting, pulling, equal diameter control, etc

 ◆Chamber pressure: 1-10MPa, high-pressure vessel design, manufacturing, and testing

 ◆Process type: Tila、PVT

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