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Home > Products&Services > Semiconductor Process Equipmen > Oxidative diffusion LPCVD furnace

12 "oxidation LPCVD furnace (production type)

Performance：

 ◆Vertical structure, efficient production capacity, 100-125 pieces/batch

 ◆Stable and excellent film-forming uniformity, with good repeatability

 ◆A high-precision and reliable automatic pressure control system

 ◆Advanced Technology for Low Oxygen Control in Microenvironments

 ◆Stable control of silicon wafer particle size, international standard

 ◆Fully automated process, AGV/OTH docking

 ◆High integration, complete factory MES system integration

 ◆Complies with standards such as SECS II/HSMS/GEM

 Supporting process：

 ◆Oxidation (dry and wet oxygen), annealing (N2, H2, rapid annealing)

 ◆Polycrystalline silicon P-Si, silicon nitride Si3N4, silicon oxide SiO2

 ◆Phosphorus silicon glass PSG, boron phosphorus silicon glass BPSG

 ◆TEOS，LTO，HTO，SIPOS...


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